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華邦的w25x和w25q spiflash®多I/O的記憶特征的流行的串行外設(shè)接口（SPI），從512K至512M的容量，小的可擦除扇區(qū)和業(yè)界最高性能。的w25x家庭支持雙SPI標(biāo)準(zhǔn)SPI時鐘速率翻倍。w25q的家庭是一個“超集”在25X家族dual-i / O和quad-i / O SPI更高的性能。時鐘速率高達(dá)104mhz實現(xiàn)416mhz等效（50M字節(jié)/秒的傳輸速率[詳細(xì)]
The W632GU6MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.產(chǎn)品特點Power Supply: VDD, VDDQ = 1.35V(typ.), VDD, VDDQ=1.283V to 1.45VBackward compatible to VDD, VDDQ=1.5V ± 0.075 VDouble Data Rate architecture: two data transfe[詳細(xì)]
The W632GG6MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.產(chǎn)品特點Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[詳細(xì)]
The W632GG8MB is a 2G bits DDR3 SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.產(chǎn)品特點Power Supply: VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefet[詳細(xì)]
The W632GU8MB is a 2G bits DDR3L SDRAM and speed involving -09, -11, -12, -15, 09I, 11I, 12I, 15I, 09J, 11J, 12J and 15J.產(chǎn)品特點Power Supply: VDD, VDDQ = 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V±0.075VDouble Data Rate architecture: two data trans[詳細(xì)]
The W631GG6MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J產(chǎn)品特點Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[詳細(xì)]
The W631GG8MB is a 1G bits DDR3 SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J產(chǎn)品特點Power Supply: VDD, VDDQ = 1.5 V ± 0.075 V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operat[詳細(xì)]
The W631GU6MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J產(chǎn)品特點Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[詳細(xì)]
The W631GU8MB is a 1G bits DDR3L SDRAM and speed involving -09, 09I, 09J, -11, 11I, 11J, -12, 12I, 12J, -15, 15I and 15J產(chǎn)品特點Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45VBackward compatible to VDD, VDDQ = 1.5V ± 0.075VDouble Data Rate architecture: two data transfers per cl[詳細(xì)]
The W6351G6KB is a 512M bits DDR3 SDRAM and speed involving -12 and -15產(chǎn)品特點Double Data Rate architecture: two data transfers per clock cycleEight internal banks for concurrent operation8 bit prefetch architectureCAS Latency: 6, 8, 9, 10 and 11Burst length 8 (BL8) and burst chop 4 (BC[詳細(xì)]
8M-bit 1.2V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPIFeaturesDual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 4,096 pages (256 bytes), page program in 1mS (typ.) Single/Dual/Quad Fast Read instructions&[詳細(xì)]
8M-bit 1.2V/1.5V Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI產(chǎn)品特點Dual/Quad Serial Peripheral Interface Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 4,096 pages (256 bytes), page program in 1mS (typ.) Single/Dual/Quad Fast Read instruct[詳細(xì)]
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