Winbond W967D6HBG pSRAM
W967D6HBG
| Density | 8Mbit x16 CRAM | Status | |
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| Vcc | 1.8V / 1.8V | Frequency | 133MHz / 70ns |
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| Package | | Temperature Range | -40~85c |
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| Feature List | This a 128M bit CellularRAM compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. 產(chǎn)品特點(diǎn) - Supports asynchronous, page, and burst operations
- VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ
- Random access time: 70ns
- Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst
- Burst wrap or sequential
- Max clock rate: 133 MHz (tCLK = 7.5ns)
- tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz
- Low-power features: TCR, PAR, DPD
- Page mode READ access:Sixteen-word page size
- Interpage READ access: 70ns, Intrapage READ access: 20ns
- Package 54VFBGA
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編輯：admin 最后修改時(shí)間：2019-08-30 瀏覽：39
