Winbond W957D6HBC pSRAM
W957D6HBC
| Density | 8Mbit x16 CRAM-ADM | Status | |
|---|---|---|---|
| Vcc | 1.8V / 1.8V | Frequency | 133MHz / 70ns |
| Package | Temperature Range | -40~85c | |
| Feature List | W957D6HBC googleplus This a 128M bit CellularRAM™ compliant products, organized as 8M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. 產(chǎn)品特點(diǎn) 16-bit address/ data bus width, Address-High, Address-Low, Data Multiplexed Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns) tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz Low-power features: TCR, PAR, DPD Page mode READ access:Sixteen-word page size Interpage READ access: 70ns, Intrapage READ access: 20ns Package 54VFBGA | ||
編輯：admin 最后修改時(shí)間：2017-08-19 瀏覽：56
