MICRON DDR4 SDRAM
作者： 來(lái)源: 發(fā)布時(shí)間：2020-06-02 瀏覽：40
|
| 關(guān)鍵字： DDR4 SDRAM |
| DDR4 is the newest iteration in DRAM, loaded with new features that improve reliability, speed, power, and stacking capabilities for the enterprise, micro-server, ultrathin, and tablet markets. With data rates reaching 2400 Mb/s, DDR4 increases performance up to 50% over DDR3. DDR4 also delivers a 20% reduction in voltage over DDR3—however, when DDR4’s additional power-saving features are taken into account, total overall power savings versus DDR3 can be as much as 40%. The new boundary scan feature (also known as JTAG) enables early fault detection during testing, thereby reducing debugging time, improving system reliability, and ultimately, saving development and production costs.Improved performance—up to 50% higher than DDR3 Improved power consumption—up to 40% lower than DDR3 Higher data rates—2400 MT/s at release Faster burst accesses Improved data signal integrity Higher-capacity memory subsystem, with up to 8-die stacking Early fault detection and improved system reliability through JTAG |
